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IRFR9N20DTRPBF Технические параметры

Infineon Technologies  IRFR9N20DTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 9.4A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 86W Tc
Turn Off Delay Time 13 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 380mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 200V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 9.4A
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 86W
Case Connection DRAIN
Turn On Delay Time 7.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 16ns
Vgs (Max) ±30V
Fall Time (Typ) 9.3 ns
Continuous Drain Current (ID) 9.4A
Threshold Voltage 5.5V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Nominal Vgs 5.5 V
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFR9N20DTRPBF Документы

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