[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

IRFS3307ZTRLPBF Технические параметры

Infineon Technologies  IRFS3307ZTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 120A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 230W Tc
Turn Off Delay Time 51 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Свойство продукта Значение свойства
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 26 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 64ns
Vgs (Max) ±20V
Fall Time (Typ) 65 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0058Ohm
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 140 mJ
Height 4.572mm
Length 10.668mm
Width 9.652mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

IRFS3307ZTRLPBF Документы

IRFS3307ZTRLPBF brand manufacturers: Infineon Technologies, Anli stock, IRFS3307ZTRLPBF reference price.Infineon Technologies. IRFS3307ZTRLPBF parameters, IRFS3307ZTRLPBF Datasheet PDF and pin diagram description download.You can use the IRFS3307ZTRLPBF Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRFS3307ZTRLPBF pin diagram and circuit diagram and usage method of function,IRFS3307ZTRLPBF electronics tutorials.You can download from the Anli.