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IRFS4410ZTRLPBF Технические параметры

Infineon Technologies  IRFS4410ZTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 97A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 230W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 9MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRFS4410
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4820pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 52ns
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Continuous Drain Current (ID) 97A
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 242 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFS4410ZTRLPBF Документы

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