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IRFS52N15DPBF Технические параметры

Infineon Technologies  IRFS52N15DPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 52 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 51A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.8W Ta 230W Tc
Turn Off Delay Time 28 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2002
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 32MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 150V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 60A
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 320W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 36A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Rise Time 47ns
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 240A
Dual Supply Voltage 150V
Avalanche Energy Rating (Eas) 470 mJ
Nominal Vgs 5 V
Height 4.826mm
Length 10.668mm
Width 9.65mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFS52N15DPBF Документы

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