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IRFS52N15DTRRP Технические параметры

Infineon Technologies  IRFS52N15DTRRP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Current - Continuous Drain (Id) @ 25℃ 51A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.8W Ta 230W Tc
Turn Off Delay Time 28 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2010
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 3.8W
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 32m Ω @ 36A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Rise Time 47ns
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 51A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 150V
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

IRFS52N15DTRRP Документы

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