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Infineon Technologies IRFS52N15DTRRP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Number of Pins | 3Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 51A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 3.8W Ta 230W Tc | |
| Turn Off Delay Time | 28 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2010 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 3.8W | |
| Turn On Delay Time | 16 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 32m Ω @ 36A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2770pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 89nC @ 10V | |
| Rise Time | 47ns | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 25 ns | |
| Continuous Drain Current (ID) | 51A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | 150V | |
| Height | 4.826mm | |
| Length | 10.668mm | |
| Width | 9.65mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |