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IRFS7537TRLPBF Технические параметры

Infineon Technologies  IRFS7537TRLPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Weight 3.949996g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 173A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 230W Tc
Turn Off Delay Time 82 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®, StrongIRFET™
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7020pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Rise Time 105ns
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Fall Time (Typ) 84 ns
Continuous Drain Current (ID) 173A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 700A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 554 mJ
Height 4.83mm
Length 10.67mm
Width 9.65mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFS7537TRLPBF Документы

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