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IRFU3806PBF Технические параметры

Infineon Technologies  IRFU3806PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 43A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 71W Tc
Turn Off Delay Time 49 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 15.8MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 71W
Turn On Delay Time 6.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 40ns
Vgs (Max) ±20V
Fall Time (Typ) 47 ns
Continuous Drain Current (ID) 43A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 170A
Recovery Time 33 ns
Height 6.22mm
Length 6.73mm
Width 2.39mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRFU3806PBF Документы

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