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IRFU3910PBF Технические параметры

Infineon Technologies  IRFU3910PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 16A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 79W Tc
Turn Off Delay Time 37 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 1998
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED
Voltage - Rated DC 100V
Peak Reflow Temperature (Cel) 260
Current Rating 16A
Time@Peak Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Lead Pitch 2.28mm
Свойство продукта Значение свойства
Lead Length 9.65mm
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 52W
Case Connection DRAIN
Turn On Delay Time 6.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 115m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Rise Time 27ns
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 15A
Drain-source On Resistance-Max 0.115Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 60A
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 150 mJ
Nominal Vgs 4 V
Height 6.22mm
Length 6.7056mm
Width 2.3876mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFU3910PBF Документы

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