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IRFU4104PBF Технические параметры

Infineon Technologies  IRFU4104PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3Pins
Current - Continuous Drain (Id) @ 25℃ 42A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 140W Tc
Turn Off Delay Time 37 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Voltage - Rated DC 40V
Current Rating 119A
Lead Pitch 2.28mm
Lead Length 9.65mm
Element Configuration Single
Power Dissipation 140W
Свойство продукта Значение свойства
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.5m Ω @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Rise Time 69ns
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Continuous Drain Current (ID) 119A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Dual Supply Voltage 40V
Recovery Time 42 ns
Nominal Vgs 4 V
Height 6.22mm
Length 6.7056mm
Width 2.3876mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRFU4104PBF Документы

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