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Infineon Technologies IRFU4105PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Number of Pins | 3Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 27A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 68W Tc | |
| Turn Off Delay Time | 31 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 1998 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Resistance | 45Ohm | |
| Voltage - Rated DC | 55V | |
| Current Rating | 27A | |
| Power Dissipation | 48W | |
| Turn On Delay Time | 7 ns |
| Свойство продукта | Значение свойства | |
|---|---|---|
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 45m Ω @ 16A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V | |
| Rise Time | 49ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 40 ns | |
| Continuous Drain Current (ID) | 27A | |
| Threshold Voltage | 4V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 55V | |
| Dual Supply Voltage | 55V | |
| Nominal Vgs | 4 V | |
| Height | 6.22mm | |
| Length | 6.7056mm | |
| Width | 2.3876mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |