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IRFU5305PBF Технические параметры

Infineon Technologies  IRFU5305PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 31A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 110W Tc
Turn Off Delay Time 39 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 65mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC -55V
Peak Reflow Temperature (Cel) 260
Current Rating -28A
Time@Peak Reflow Temperature-Max (s) 30
Lead Pitch 2.28mm
Свойство продукта Значение свойства
Lead Length 9.65mm
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 66ns
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Fall Time (Typ) 63 ns
Continuous Drain Current (ID) -31A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 25A
Drain to Source Breakdown Voltage -55V
Avalanche Energy Rating (Eas) 280 mJ
Nominal Vgs -4 V
Height 6.1mm
Length 6.6mm
Width 2.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

IRFU5305PBF Документы

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