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Infineon Technologies IRFU5305PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 31A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 110W Tc | |
| Turn Off Delay Time | 39 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2004 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 65mOhm | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Voltage - Rated DC | -55V | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -28A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Lead Pitch | 2.28mm |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Lead Length | 9.65mm | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 89W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 14 ns | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 65m Ω @ 16A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V | |
| Rise Time | 66ns | |
| Drain to Source Voltage (Vdss) | 55V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 63 ns | |
| Continuous Drain Current (ID) | -31A | |
| Threshold Voltage | -4V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 25A | |
| Drain to Source Breakdown Voltage | -55V | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| Nominal Vgs | -4 V | |
| Height | 6.1mm | |
| Length | 6.6mm | |
| Width | 2.3mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead, Lead Free |