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IRFU5410PBF Технические параметры

Infineon Technologies  IRFU5410PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 13A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 66W Tc
Turn Off Delay Time 45 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 1999
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Voltage - Rated DC -100V
Peak Reflow Temperature (Cel) 260
Current Rating -13A
Time@Peak Reflow Temperature-Max (s) 30
Lead Pitch 2.28mm
Lead Length 9.65mm
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 66W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 205m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time 58ns
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Fall Time (Typ) 46 ns
Continuous Drain Current (ID) -13A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.205Ohm
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 52A
Dual Supply Voltage -100V
Nominal Vgs -4 V
Height 6.22mm
Length 6.7056mm
Width 2.3876mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFU5410PBF Документы

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