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IRFZ24NSTRRPBF Технические параметры

Infineon Technologies  IRFZ24NSTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Supplier Device Package D2PAK
Current - Continuous Drain (Id) @ 25℃ 17A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.8W Ta 45W Tc
Turn Off Delay Time 19 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 55V
Current Rating 17A
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 45W
Turn On Delay Time 4.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 70mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 370pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 34ns
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Input Capacitance 370pF
Drain to Source Resistance 70mOhm
Rds On Max 70 mΩ
Height 4.699mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRFZ24NSTRRPBF Документы

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