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IRFZ44EPBF Технические параметры

Infineon Technologies  IRFZ44EPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 48A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 110W Tc
Turn Off Delay Time 70 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 1999
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 23mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature HIGH RELIABILITY, AVALANCHE RATED
Voltage - Rated DC 60V
Peak Reflow Temperature (Cel) 250
Current Rating 48A
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Qualification Status Not Qualified
Lead Pitch 2.54mm
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 60ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 48A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Avalanche Energy Rating (Eas) 220 mJ
Nominal Vgs 4 V
Height 8.77mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFZ44EPBF Документы

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