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IRFZ44NPBF Технические параметры

Infineon Technologies  IRFZ44NPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Number of Pins 3Pins
Transistor Element Material SILICON
Turn Off Delay Time 44 ns
Power Dissipation (Max) 94W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 49A Tc
Published 2001
Series HEXFET®
Packaging Tube
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 17.5MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 55V
Peak Reflow Temperature (Cel) 250
Current Rating 49A
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Lead Pitch 2.54mm
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 60ns
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Continuous Drain Current (ID) 49A
Threshold Voltage 2.1V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 95 ns
Nominal Vgs 2.1 V
Width 4.826mm
Length 10.668mm
Height 8.77mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free

IRFZ44NPBF Документы

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