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IRFZ44ZPBF Технические параметры

Infineon Technologies  IRFZ44ZPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 51A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 80W Tc
Turn Off Delay Time 33 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 1999
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 13.9Ohm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 55V
Current Rating 51A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 80W
Свойство продукта Значение свойства
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.9m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 68ns
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Continuous Drain Current (ID) 51A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 200A
Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 86 mJ
Recovery Time 35 ns
Nominal Vgs 4 V
Height 9.65mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFZ44ZPBF Документы

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