[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

IRFZ44ZSTRRPBF Технические параметры

Infineon Technologies  IRFZ44ZSTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 51A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 80W Tc
Turn Off Delay Time 33 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 1999
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 13.9MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 80W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.9m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 68ns
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Continuous Drain Current (ID) 51A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 86 mJ
Height 4.826mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

IRFZ44ZSTRRPBF Документы

IRFZ44ZSTRRPBF brand manufacturers: Infineon Technologies, Anli stock, IRFZ44ZSTRRPBF reference price.Infineon Technologies. IRFZ44ZSTRRPBF parameters, IRFZ44ZSTRRPBF Datasheet PDF and pin diagram description download.You can use the IRFZ44ZSTRRPBF Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRFZ44ZSTRRPBF pin diagram and circuit diagram and usage method of function,IRFZ44ZSTRRPBF electronics tutorials.You can download from the Anli.