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IRFZ46NPBF Технические параметры

Infineon Technologies  IRFZ46NPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 53A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 107W Tc
Turn Off Delay Time 52 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2002
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 55V
Peak Reflow Temperature (Cel) 250
Current Rating 53A
Time@Peak Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Lead Pitch 2.54mm
Свойство продукта Значение свойства
Voltage 55V
Element Configuration Single
Current 40A
Operating Mode ENHANCEMENT MODE
Power Dissipation 88W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.5m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1696pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 76ns
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Continuous Drain Current (ID) 53A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 101 ns
Nominal Vgs 4 V
Height 8.77mm
Length 10.54mm
Width 4.69mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

IRFZ46NPBF Документы

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