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IRG4BC10KDPBF Технические параметры

Infineon Technologies  IRG4BC10KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.39V
Number of Elements 1 Element
Test Conditions 480V, 5A, 100 Ω, 15V
Turn Off Delay Time 100 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 38W
Current Rating 9A
Element Configuration Single
Power Dissipation 38W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 46 ns
Transistor Application MOTOR CONTROL
Rise Time 32ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.62V
Max Collector Current 9A
JEDEC-95 Code TO-220AB
Turn On Time 78 ns
Vce(on) (Max) @ Vge, Ic 2.62V @ 15V, 5A
Turn Off Time-Nom (toff) 410 ns
Gate Charge 19nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 49ns/97ns
Switching Energy 250μJ (on), 140μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 210ns
Height 8.77mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free

IRG4BC10KDPBF Документы

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