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IRG4BC10KPBF Технические параметры

Infineon Technologies  IRG4BC10KPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Supplier Device Package TO-220AB
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.62V
Current-Collector (Ic) (Max) 9A
Test Conditions 480V, 5A, 100Ohm, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Свойство продукта Значение свойства
Max Power Dissipation 38W
Current Rating 8A
Element Configuration Single
Power Dissipation 38W
Input Type Standard
Power - Max 38W
Rise Time 24ns
Collector Emitter Voltage (VCEO) 2.62V
Max Collector Current 9A
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.62V @ 15V, 5A
Gate Charge 19nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 11ns/51ns
Switching Energy 160μJ (on), 100μJ (off)
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRG4BC10KPBF Документы

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