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IRG4BC10S Технические параметры

Infineon Technologies  IRG4BC10S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 14A
Number of Elements 1 Element
Test Conditions 480V, 8A, 100 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Terminal Position SINGLE
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 38W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Turn On Time 106 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 8A
Turn Off Time-Nom (toff) 1780 ns
Gate Charge 15nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 25ns/630ns
Switching Energy 140μJ (on), 2.58mJ (off)
RoHS Status Non-RoHS Compliant
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IRG4BC10S Документы

IRG4BC10S brand manufacturers: Infineon Technologies, Anli stock, IRG4BC10S reference price.Infineon Technologies. IRG4BC10S parameters, IRG4BC10S Datasheet PDF and pin diagram description download.You can use the IRG4BC10S Transistors - IGBTs - Single, DSP Datesheet PDF, find IRG4BC10S pin diagram and circuit diagram and usage method of function,IRG4BC10S electronics tutorials.You can download from the Anli.