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Infineon Technologies IRG4BC10SD-LPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Collector-Emitter Saturation Voltage | 1.8V | |
| Test Conditions | 480V, 8A, 100 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2004 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Voltage - Rated DC | 600V | |
| Max Power Dissipation | 38W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | unknown | |
| Current Rating | 14A | |
| Element Configuration | Single | |
| Power Dissipation | 38W | |
| Input Type | Standard | |
| Rise Time | 32ns | |
| Collector Emitter Voltage (VCEO) | 1.8V | |
| Max Collector Current | 14A | |
| Reverse Recovery Time | 28 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A | |
| Gate Charge | 15nC | |
| Current - Collector Pulsed (Icm) | 18A | |
| Td (on/off) @ 25°C | 76ns/815ns | |
| Switching Energy | 310μJ (on), 3.28mJ (off) | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |