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IRG4BC10UDPBF Технические параметры

Infineon Technologies  IRG4BC10UDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 6.000006g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.6V
Number of Elements 1 Element
Test Conditions 480V, 5A, 100 Ω, 15V
Turn Off Delay Time 87 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 38W
Current Rating 8.5A
Element Configuration Single
Power Dissipation 38W
Case Connection COLLECTOR
Свойство продукта Значение свойства
Input Type Standard
Turn On Delay Time 40 ns
Transistor Application POWER CONTROL
Rise Time 16ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 8.5A
Reverse Recovery Time 28 ns
JEDEC-95 Code TO-220AB
Turn On Time 56 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 5A
Turn Off Time-Nom (toff) 345 ns
Gate Charge 15nC
Current - Collector Pulsed (Icm) 34A
Td (on/off) @ 25°C 40ns/87ns
Switching Energy 140μJ (on), 120μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 210ns
Height 15.24mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRG4BC10UDPBF Документы

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