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IRG4BC15UDPBF Технические параметры

Infineon Technologies  IRG4BC15UDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.95V
Number of Elements 1 Element
Test Conditions 480V, 7.8A, 75 Ω, 15V
Turn Off Delay Time 160 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature ULTRA FAST SOFT RECOVERY
Voltage - Rated DC 600V
Max Power Dissipation 49W
Current Rating 14A
Element Configuration Single
Power Dissipation 49W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 17 ns
Transistor Application POWER CONTROL
Rise Time 20ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 14A
Reverse Recovery Time 28 ns
JEDEC-95 Code TO-220AB
Turn On Time 37 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 7.8A
Turn Off Time-Nom (toff) 400 ns
Gate Charge 23nC
Current - Collector Pulsed (Icm) 42A
Td (on/off) @ 25°C 17ns/160ns
Switching Energy 240μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 15.24mm
Length 10.5156mm
Width 4.699mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free

IRG4BC15UDPBF Документы

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