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IRG4BC15UDSTRLP Технические параметры

Infineon Technologies  IRG4BC15UDSTRLP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Weight 260.39037mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 7.8A, 75 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish MATTE TIN
Max Power Dissipation 49W
Свойство продукта Значение свойства
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 49W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 14A
Reverse Recovery Time 28 ns
Turn On Time 37 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 7.8A
Turn Off Time-Nom (toff) 400 ns
Gate Charge 23nC
Current - Collector Pulsed (Icm) 42A
Td (on/off) @ 25°C 17ns/160ns
Switching Energy 240μJ (on), 260μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant

IRG4BC15UDSTRLP Документы

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