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IRG4BC20FPBF Технические параметры

Infineon Technologies  IRG4BC20FPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.66V
Number of Elements 1 Element
Test Conditions 480V, 9A, 50 Ω, 15V
Turn Off Delay Time 190 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature FAST SWITCHING
Voltage - Rated DC 600V
Max Power Dissipation 60W
Terminal Position SINGLE
Current Rating 16A
Element Configuration Dual
Свойство продукта Значение свойства
Power Dissipation 60W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 24 ns
Transistor Application POWER CONTROL
Rise Time 17ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 16A
JEDEC-95 Code TO-220AB
Turn On Time 41 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 9A
Turn Off Time-Nom (toff) 640 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 64A
Td (on/off) @ 25°C 24ns/190ns
Switching Energy 70μJ (on), 600μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 15.24mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free

IRG4BC20FPBF Документы

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