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IRG4BC20KDPBF Технические параметры

Infineon Technologies  IRG4BC20KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 6.000006g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 9A, 50 Ω, 15V
Turn Off Delay Time 180 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 60W
Current Rating 16A
Element Configuration Single
Power Dissipation 60W
Case Connection COLLECTOR
Свойство продукта Значение свойства
Input Type Standard
Turn On Delay Time 54 ns
Transistor Application MOTOR CONTROL
Rise Time 34ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 16A
Reverse Recovery Time 37 ns
JEDEC-95 Code TO-220AB
Turn On Time 88 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 9A
Turn Off Time-Nom (toff) 380 ns
Gate Charge 34nC
Current - Collector Pulsed (Icm) 32A
Td (on/off) @ 25°C 54ns/180ns
Switching Energy 340μJ (on), 300μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 110ns
Height 8.77mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free

IRG4BC20KDPBF Документы

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