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IRG4BC20KD-SPBF Технические параметры

Infineon Technologies  IRG4BC20KD-SPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Weight 2g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.27V
Number of Elements 1 Element
Test Conditions 480V, 9A, 50 Ω, 15V
Turn Off Delay Time 180 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA FAST SOFT RECOVERY
Voltage - Rated DC 600V
Max Power Dissipation 60W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 16A
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Base Part Number IRG4BC20KD-SPBF
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 60W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 54 ns
Forward Current 7A
Transistor Application MOTOR CONTROL
Rise Time 37ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 16A
Reverse Recovery Time 37 ns
Turn On Time 88 ns
Max Forward Surge Current (Ifsm) 32A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 9A
Turn Off Time-Nom (toff) 380 ns
Gate Charge 34nC
Td (on/off) @ 25°C 54ns/180ns
Switching Energy 340μJ (on), 300μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 110ns
Height 4.83mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4BC20KD-SPBF Документы

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