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Infineon Technologies IRG4BC20MD-SPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Number of Pins | 3Pins | |
| Supplier Device Package | D2PAK | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Collector-Emitter Saturation Voltage | 2.1V | |
| Current-Collector (Ic) (Max) | 18A | |
| Test Conditions | 480V, 11A, 50Ohm, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2010 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Termination | SMD/SMT | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 600V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 60W | |
| Current Rating | 18A | |
| Element Configuration | Single | |
| Power Dissipation | 60W | |
| Input Type | Standard | |
| Power - Max | 60W | |
| Rise Time | 41ns | |
| Collector Emitter Voltage (VCEO) | 2.1V | |
| Max Collector Current | 18A | |
| Reverse Recovery Time | 37ns | |
| Voltage - Collector Emitter Breakdown (Max) | 600V | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 11A | |
| Gate Charge | 39nC | |
| Current - Collector Pulsed (Icm) | 36A | |
| Td (on/off) @ 25°C | 21ns/463ns | |
| Switching Energy | 410μJ (on), 2.03mJ (off) | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |