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IRG4BC20SD-S Технические параметры

Infineon Technologies  IRG4BC20SD-S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 19A
Number of Elements 1 Element
Test Conditions 480V, 10A, 50 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature LOW CONDUCTION LOSS
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 225
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 60W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 37ns
Voltage - Collector Emitter Breakdown (Max) 600V
Turn On Time 99 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 10A
Turn Off Time-Nom (toff) 1780 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 38A
Td (on/off) @ 25°C 62ns/690ns
Switching Energy 320μJ (on), 2.58mJ (off)
RoHS Status Non-RoHS Compliant

IRG4BC20SD-S Документы

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