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IRG4BC20WPBF Технические параметры

Infineon Technologies  IRG4BC20WPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.6V
Number of Elements 1 Element
Test Conditions 480V, 6.5A, 50 Ω, 15V
Turn Off Delay Time 110 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 60W
Terminal Position SINGLE
Current Rating 13A
Element Configuration Dual
Power Dissipation 60W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 22 ns
Transistor Application MOTOR CONTROL
Rise Time 15ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 13A
JEDEC-95 Code TO-220AB
Turn On Time 36 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 6.5A
Turn Off Time-Nom (toff) 300 ns
Gate Charge 26nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 22ns/110ns
Switching Energy 60μJ (on), 80μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 96ns
Height 8.77mm
Length 10.54mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRG4BC20WPBF Документы

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