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IRG4BC30FD1PBF Технические параметры

Infineon Technologies  IRG4BC30FD1PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.8V
Number of Elements 1 Element
Test Conditions 480V, 17A, 23 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 100W
Current Rating 31A
Element Configuration Single
Power Dissipation 100W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 24ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 31A
Reverse Recovery Time 46 ns
JEDEC-95 Code TO-220AB
Turn On Time 46 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Turn Off Time-Nom (toff) 740 ns
Gate Charge 57nC
Current - Collector Pulsed (Icm) 124A
Td (on/off) @ 25°C 22ns/250ns
Switching Energy 370μJ (on), 1.42mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 15.24mm
Length 10.54mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRG4BC30FD1PBF Документы

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