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IRG4BC30FD-S Технические параметры

Infineon Technologies  IRG4BC30FD-S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 31A
Number of Elements 1 Element
Test Conditions 480V, 17A, 23 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 225
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 42ns
Voltage - Collector Emitter Breakdown (Max) 600V
Turn On Time 69 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Turn Off Time-Nom (toff) 620 ns
Gate Charge 51nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 42ns/230ns
Switching Energy 630μJ (on), 1.39mJ (off)
RoHS Status Non-RoHS Compliant
Просмотр сходства

IRG4BC30FD-S Документы

IRG4BC30FD-S brand manufacturers: Infineon Technologies, Anli stock, IRG4BC30FD-S reference price.Infineon Technologies. IRG4BC30FD-S parameters, IRG4BC30FD-S Datasheet PDF and pin diagram description download.You can use the IRG4BC30FD-S Transistors - IGBTs - Single, DSP Datesheet PDF, find IRG4BC30FD-S pin diagram and circuit diagram and usage method of function,IRG4BC30FD-S electronics tutorials.You can download from the Anli.