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Infineon Technologies IRG4BC30FD-STRR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 31A | |
| Number of Elements | 1 Element | |
| Test Conditions | 480V, 17A, 23 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2004 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PSSO-G2 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 100W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Reverse Recovery Time | 42ns | |
| Voltage - Collector Emitter Breakdown (Max) | 600V | |
| Power Dissipation-Max (Abs) | 100W | |
| Turn On Time | 69 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 17A | |
| Turn Off Time-Nom (toff) | 620 ns | |
| Gate Charge | 51nC | |
| Current - Collector Pulsed (Icm) | 120A | |
| Td (on/off) @ 25°C | 42ns/230ns | |
| Switching Energy | 630μJ (on), 1.39mJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 6V | |
| Fall Time-Max (tf) | 230ns | |
| RoHS Status | Non-RoHS Compliant |