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IRG4BC30FPBF Технические параметры

Infineon Technologies  IRG4BC30FPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.59V
Number of Elements 1 Element
Test Conditions 480V, 17A, 23 Ω, 15V
Turn Off Delay Time 200 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature FAST SPEED
Voltage - Rated DC 600V
Max Power Dissipation 100W
Current Rating 31A
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 100W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 21 ns
Transistor Application POWER CONTROL
Rise Time 15ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 31A
JEDEC-95 Code TO-220AB
Turn On Time 36 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Turn Off Time-Nom (toff) 640 ns
Gate Charge 51nC
Current - Collector Pulsed (Icm) 124A
Td (on/off) @ 25°C 21ns/200ns
Switching Energy 230μJ (on), 1.18mJ (off)
Fall Time-Max (tf) 270ns
Height 8.77mm
Length 10.54mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free

IRG4BC30FPBF Документы

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