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IRG4BC30KDPBF Технические параметры

Infineon Technologies  IRG4BC30KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Transistor Element Material SILICON
Turn Off Delay Time 160 ns
Test Conditions 480V, 16A, 23 Ω, 15V
Number of Elements 1 Element
Collector-Emitter Breakdown Voltage 600V
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 100W
Current Rating 28A
Element Configuration Single
Power Dissipation 100W
Case Connection COLLECTOR
Свойство продукта Значение свойства
Input Type Standard
Turn On Delay Time 60 ns
Transistor Application MOTOR CONTROL
Rise Time 42ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 28A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-220AB
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 67nC
Current - Collector Pulsed (Icm) 56A
Td (on/off) @ 25°C 60ns/160ns
Switching Energy 600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 120ns
Width 4.69mm
Length 10.5156mm
Height 8.763mm
RoHS Status RoHS Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free

IRG4BC30KDPBF Документы

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