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IRG4BC30KD-SPBF Технические параметры

Infineon Technologies  IRG4BC30KD-SPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 16A, 23 Ω, 15V
Turn Off Delay Time 160 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 100W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 28A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRG4BC30KD-SPBF
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 100W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 60 ns
Transistor Application MOTOR CONTROL
Rise Time 42ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 28A
Reverse Recovery Time 42 ns
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 67nC
Current - Collector Pulsed (Icm) 56A
Td (on/off) @ 25°C 60ns/160ns
Switching Energy 600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 120ns
Height 4.699mm
Length 10.668mm
Width 9.65mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4BC30KD-SPBF Документы

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