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IRG4BC30KDSTRLP Технические параметры

Infineon Technologies  IRG4BC30KDSTRLP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Weight 260.39037mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 16A, 23 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 100W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Base Part Number IRG4BC30KD-SPBF
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 28A
Reverse Recovery Time 42 ns
Max Breakdown Voltage 600V
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 67nC
Current - Collector Pulsed (Icm) 56A
Td (on/off) @ 25°C 60ns/160ns
Switching Energy 600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 120ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4BC30KDSTRLP Документы

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