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IRG4BC30KPBF Технические параметры

Infineon Technologies  IRG4BC30KPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.7V
Number of Elements 1 Element
Test Conditions 480V, 16A, 23 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 100W
Terminal Position SINGLE
Current Rating 28A
Element Configuration Dual
Power Dissipation 100W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 28ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 28A
JEDEC-95 Code TO-220AB
Turn On Time 54 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Turn Off Time-Nom (toff) 380 ns
Gate Charge 67nC
Current - Collector Pulsed (Icm) 58A
Td (on/off) @ 25°C 26ns/130ns
Switching Energy 360μJ (on), 510μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 170ns
Height 15.24mm
Length 10.5156mm
Width 14.6812mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRG4BC30KPBF Документы

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