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IRG4BC30SPBF Технические параметры

Infineon Technologies  IRG4BC30SPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.4V
Number of Elements 1 Element
Turn Off Delay Time 540 ns
Test Conditions 480V, 18A, 23 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 600V
Max Power Dissipation 100W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 250
Current Rating 34A
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Element Configuration Dual
Power Dissipation 100W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 22 ns
Transistor Application POWER CONTROL
Rise Time 18ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 34A
JEDEC-95 Code TO-220AB
Turn On Time 40 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 18A
Turn Off Time-Nom (toff) 1550 ns
Gate Charge 50nC
Current - Collector Pulsed (Icm) 68A
Td (on/off) @ 25°C 22ns/540ns
Switching Energy 260μJ (on), 3.45mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 590ns
Height 15.24mm
Length 10.54mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4BC30SPBF Документы

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