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IRG4BC30W-S Технические параметры

Infineon Technologies  IRG4BC30W-S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 23A
Number of Elements 1 Element
Test Conditions 480V, 12A, 23 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature LOW CONDUCTION LOSS
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 225
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRG4BC30W-S
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Turn On Time 41 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Turn Off Time-Nom (toff) 300 ns
Gate Charge 51nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 25ns/99ns
Switching Energy 130μJ (on), 130μJ (off)
RoHS Status Non-RoHS Compliant
Просмотр сходства

IRG4BC30W-S Документы

IRG4BC30W-S brand manufacturers: Infineon Technologies, Anli stock, IRG4BC30W-S reference price.Infineon Technologies. IRG4BC30W-S parameters, IRG4BC30W-S Datasheet PDF and pin diagram description download.You can use the IRG4BC30W-S Transistors - IGBTs - Single, DSP Datesheet PDF, find IRG4BC30W-S pin diagram and circuit diagram and usage method of function,IRG4BC30W-S electronics tutorials.You can download from the Anli.