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IRG4BC40KPBF Технические параметры

Infineon Technologies  IRG4BC40KPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.6V
Number of Elements 1 Element
Test Conditions 480V, 25A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST
Voltage - Rated DC 600V
Max Power Dissipation 160W
Current Rating 42A
Element Configuration Single
Power Dissipation 160W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 18ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 42A
JEDEC-95 Code TO-220AB
Turn On Time 48 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 25A
Turn Off Time-Nom (toff) 340 ns
Gate Charge 120nC
Current - Collector Pulsed (Icm) 84A
Td (on/off) @ 25°C 30ns/140ns
Switching Energy 620μJ (on), 330μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 210ns
Height 8.77mm
Length 10.54mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4BC40KPBF Документы

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