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IRG4BC40UPBF Технические параметры

Infineon Technologies  IRG4BC40UPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 20A, 10 Ω, 15V
Turn Off Delay Time 110 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST SWITCHING
Voltage - Rated DC 600V
Max Power Dissipation 160W
Current Rating 40A
Element Configuration Single
Power Dissipation 160W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 34 ns
Transistor Application POWER CONTROL
Rise Time 19ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 40A
JEDEC-95 Code TO-220AB
Turn On Time 49 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Turn Off Time-Nom (toff) 380 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 34ns/110ns
Switching Energy 320μJ (on), 350μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 180ns
Height 16.51mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

IRG4BC40UPBF Документы

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