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IRG4IBC10UDPBF Технические параметры

Infineon Technologies  IRG4IBC10UDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.15V
Number of Elements 1 Element
Test Conditions 480V, 5A, 100 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST
Voltage - Rated DC 600V
Max Power Dissipation 25W
Current Rating 6.8A
Element Configuration Single
Power Dissipation 25W
Свойство продукта Значение свойства
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 16ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 6.8A
Reverse Recovery Time 28 ns
JEDEC-95 Code TO-220AB
Turn On Time 56 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 5A
Turn Off Time-Nom (toff) 345 ns
Gate Charge 15nC
Current - Collector Pulsed (Icm) 27A
Td (on/off) @ 25°C 40ns/87ns
Switching Energy 140μJ (on), 120μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 210ns
Height 16.129mm
Length 10.7442mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4IBC10UDPBF Документы

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