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IRG4IBC20KDPBF Технические параметры

Infineon Technologies  IRG4IBC20KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Weight 2.299997g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 9A, 50 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 34W
Current Rating 11.5A
Element Configuration Single
Power Dissipation 34W
Case Connection ISOLATED
Свойство продукта Значение свойства
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 34ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 11.5A
Reverse Recovery Time 37 ns
JEDEC-95 Code TO-220AB
Turn On Time 88 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 9A
Turn Off Time-Nom (toff) 380 ns
Gate Charge 34nC
Current - Collector Pulsed (Icm) 23A
Td (on/off) @ 25°C 54ns/180ns
Switching Energy 340μJ (on), 300μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 110ns
Height 9.02mm
Length 10.67mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4IBC20KDPBF Документы

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