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IRG4IBC20WPBF Технические параметры

Infineon Technologies  IRG4IBC20WPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 6.5A, 50 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 34W
Terminal Position SINGLE
Current Rating 11.8A
Element Configuration Dual
Power Dissipation 34W
Свойство продукта Значение свойства
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 14ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 12A
JEDEC-95 Code TO-220AB
Turn On Time 36 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 6.5A
Turn Off Time-Nom (toff) 300 ns
Gate Charge 26nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 22ns/110ns
Switching Energy 60μJ (on), 80μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 96ns
Height 14.224mm
Length 10.7442mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRG4IBC20WPBF Документы

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