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Infineon Technologies IRG4IBC20WPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Number of Elements | 1 Element | |
| Test Conditions | 480V, 6.5A, 50 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2004 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Termination | Through Hole | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Voltage - Rated DC | 600V | |
| Max Power Dissipation | 34W | |
| Terminal Position | SINGLE | |
| Current Rating | 11.8A | |
| Element Configuration | Dual | |
| Power Dissipation | 34W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Case Connection | ISOLATED | |
| Input Type | Standard | |
| Transistor Application | POWER CONTROL | |
| Rise Time | 14ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 2.6V | |
| Max Collector Current | 12A | |
| JEDEC-95 Code | TO-220AB | |
| Turn On Time | 36 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 6.5A | |
| Turn Off Time-Nom (toff) | 300 ns | |
| Gate Charge | 26nC | |
| Current - Collector Pulsed (Icm) | 52A | |
| Td (on/off) @ 25°C | 22ns/110ns | |
| Switching Energy | 60μJ (on), 80μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 6V | |
| Fall Time-Max (tf) | 96ns | |
| Height | 14.224mm | |
| Length | 10.7442mm | |
| Width | 4.826mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |