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Infineon Technologies IRG4IBC30FDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-220AB Full-Pak | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Current-Collector (Ic) (Max) | 20.3A | |
| Test Conditions | 480V, 17A, 23Ohm, 15V | |
| Turn Off Delay Time | 310 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2004 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 600V | |
| Max Power Dissipation | 45W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 20.3A | |
| Element Configuration | Single | |
| Power Dissipation | 45W | |
| Input Type | Standard | |
| Turn On Delay Time | 42 ns | |
| Power - Max | 45W | |
| Rise Time | 26ns | |
| Collector Emitter Voltage (VCEO) | 1.8V | |
| Max Collector Current | 20.3A | |
| Reverse Recovery Time | 42 ns | |
| Voltage - Collector Emitter Breakdown (Max) | 600V | |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 17A | |
| Gate Charge | 51nC | |
| Current - Collector Pulsed (Icm) | 120A | |
| Td (on/off) @ 25°C | 42ns/230ns | |
| Switching Energy | 630μJ (on), 1.39mJ (off) | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |