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IRG4IBC30FDPBF Технические параметры

Infineon Technologies  IRG4IBC30FDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Supplier Device Package TO-220AB Full-Pak
Collector-Emitter Breakdown Voltage 600V
Current-Collector (Ic) (Max) 20.3A
Test Conditions 480V, 17A, 23Ohm, 15V
Turn Off Delay Time 310 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Max Power Dissipation 45W
Свойство продукта Значение свойства
Current Rating 20.3A
Element Configuration Single
Power Dissipation 45W
Input Type Standard
Turn On Delay Time 42 ns
Power - Max 45W
Rise Time 26ns
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 20.3A
Reverse Recovery Time 42 ns
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Gate Charge 51nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 42ns/230ns
Switching Energy 630μJ (on), 1.39mJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRG4IBC30FDPBF Документы

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