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IRG4IBC30KDPBF Технические параметры

Infineon Technologies  IRG4IBC30KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 16A, 23 Ω, 15V
Turn Off Delay Time 160 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature ULTRA FAST SOFT RECOVERY
Voltage - Rated DC 600V
Max Power Dissipation 45W
Current Rating 17A
Element Configuration Single
Power Dissipation 45W
Case Connection ISOLATED
Свойство продукта Значение свойства
Input Type Standard
Turn On Delay Time 60 ns
Transistor Application POWER CONTROL
Rise Time 42ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 17A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-220AB
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 67nC
Current - Collector Pulsed (Icm) 34A
Td (on/off) @ 25°C 60ns/160ns
Switching Energy 600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 120ns
Height 16.129mm
Length 10.7442mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4IBC30KDPBF Документы

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