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IRG4PC30FPBF Технические параметры

Infineon Technologies  IRG4PC30FPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.59V
Number of Elements 1 Element
Test Conditions 480V, 17A, 23 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 100W
Terminal Position SINGLE
Current Rating 31A
Element Configuration Dual
Power Dissipation 100W
Case Connection COLLECTOR
Свойство продукта Значение свойства
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 15ns
Drain to Source Voltage (Vdss) 250V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 31A
JEDEC-95 Code TO-247AC
Max Dual Supply Voltage 250V
Turn On Time 36 ns
Max Forward Surge Current (Ifsm) 31A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Turn Off Time-Nom (toff) 640 ns
Gate Charge 51nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 21ns/200ns
Switching Energy 230μJ (on), 1.18mJ (off)
Fall Time-Max (tf) 270ns
Height 20.2946mm
Length 15.875mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4PC30FPBF Документы

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