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IRG4PC40KDPBF Технические параметры

Infineon Technologies  IRG4PC40KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.1V
Number of Elements 1 Element
Test Conditions 480V, 25A, 10 Ω, 15V
Turn Off Delay Time 110 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 160W
Current Rating 42A
Element Configuration Single
Power Dissipation 160W
Case Connection COLLECTOR
Свойство продукта Значение свойства
Input Type Standard
Turn On Delay Time 53 ns
Transistor Application POWER CONTROL
Rise Time 37ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 42A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-247AC
Turn On Time 89 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 25A
Turn Off Time-Nom (toff) 360 ns
Gate Charge 120nC
Current - Collector Pulsed (Icm) 84A
Td (on/off) @ 25°C 53ns/110ns
Switching Energy 950μJ (on), 760μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 150ns
Height 20.2946mm
Length 15.875mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4PC40KDPBF Документы

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